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Microchip Launches 3.3 kV HV‑D3 mSiC® Power Modules to Enable Solid-State Transformers for AI Data Centers

  • Microchip Technology announced the availability of its new 3.3 kV HV-D3 mSiC power modules designed to accelerate solid-state transformer adoption in AI hyperscale data centers & high-voltage applications.
  • The modules integrate 3.3 kV silicon carbide mSiC MOSFETs & Schottky diodes in a 62 mm industry-standard package to enable efficient medium-voltage-to-rack power delivery.
  • These devices support 6 kV isolation, CTI 600-rated materials, extended creepage distances, & silicon nitride substrates for enhanced thermal conductivity & safe series connection.
  • According to Microchip, the modules reduce the number of series-connected devices by roughly half compared to lower-voltage SiC alternatives when interfacing with 13.8 kV or 34.5 kV grids.
  • The products address the 100–300A market gap by bridging discrete SiC devices & larger power modules while offering balanced switching losses for hard & soft topologies.
  • Available in half-bridge & common-source configurations with optional anti-parallel Schottky diodes, the modules target solid-state transformers, megawatt charging, rail transportation, & motor drives.
  • Production quantities are currently available for direct purchase from Microchip or through authorized worldwide distributors.
  • Development support includes application notes, design guides, simulation models, & global technical assistance to facilitate rapid prototyping.