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onsemi's EliteSiC M4 Pushes Power Density Higher as Energy Demands Grow

ON
  • onsemi introduced EliteSiC™ M4, its fourth-generation silicon carbide platform built on a trench architecture
  • The new platform delivers up to 30% higher power density & 35% lower losses compared with the previous generation
  • EliteSiC M4 extends onsemi's proven SiC leadership with over 16 billion miles of real-world operation
  • The 750 V automotive traction bare die is available now, with voltage options up to 1200 V expected in 2027
  • The technology enables more efficient systems for AI data centers, electric vehicles, & energy infrastructure
  • Specific on-resistance improvements range from 20% to 50% to enable faster switching
  • Switching figures of merit improved by 67% in hard-switching & 50% in soft-switching applications
  • The platform supports existing packages including top-side-cooled surface-mount & high-power modules
  • Qualification supports operating temperatures of 185°C & above for demanding automotive & space applications
  • AI data centers can scale compute without proportional increases in power infrastructure size
  • Electric vehicles benefit from more compact, efficient traction inverters to improve vehicle range
  • Energy infrastructure systems achieve reduced conversion losses in solar & energy storage applications
Company
Semiconductor Components Industries, LLC
Keywords
Nasdaq:ON, Semiconductor Components Industries, LLC, onsemi, EliteSiC, EliteSiC M4, silicon carbide, SiC, power semiconductors, AI data centers, EVs, Electric Vehicles, energy infrastructure